By >Daimaou - G.G-B
Samsung debuts 3-bit, 20nm 64Gb NAND Flash
Samsung has started producing 3-bit cell 20nm (Nanometer) 64GB NAND flash storage. Heavily used in smartphones especially in both iPhone 4 and iPad , these NAND flash can also be found in SSD and even SD Cards.
The good news here is that thanks to this new kind of 60GB NAND Flash we will soon (within next year) see more devices with 64GB of internal memory and let’s hope cheaper SSD.
Note : Photo above represent Samsung previous generation of 30nm NAND Flash chip.
“Samsung has repeatedly provided the market with leading-edge NAND flash solutions, including the introduction of 30nm-class*, 32Gb 3-bit NAND flash last November,” said Seijin Kim, vice president, Flash Memory Planning/Enabling, Samsung Electronics. “By now entering into full production of 20nm-class 64Gb 3-bit devices, we expect to accelerate adoption of our high-performance NAND solutions that use Toggle DDR technology, for applications that also require high-density NAND.”
The availability of storage density as high as eight gigabyte (64Gb) in a single chip will trigger widespread acceptance of Toggle DDR-based high-performance flash in UFDs and SD cards, as well as smart phones and SSDs, while replacing previous four gigabyte (32Gb) devices in the market.
Samsung’s 20nm-class, 64Gb 3-bit NAND has a 60 percent higher productivity level than 30nm-class, 32Gb 3-bit NAND. The device also offers improved performance by applying Toggle DDR (Double Data Rate) 1.0 specifications, compared to those of SDR (Single Data Rate) based 30nm-class NAND chips.
Following the production of 20nm-class 32Gb MLC NAND in April, Samsung expands its product offerings at the leading-edge 20nm-class process node with the introduction of the 20nm-class 64Gb 3-bit NAND.