Published on February 9th,2009 at 2:59 PM
By >Daimaou - G.G-B

Toshiba Announces the World’s First 128 Megabit FeRAM

FeRAM, or nonvolatile RAM, is for many the holy grail of computing, 100,000x faster than EEPROM and consuming way less energy, FeRAM will drastically change our computing habits. Today Toshiba announced their largest (128 Megabit) and fastest (1.6GB/s) FeRAM module.

Imagine for a second all the speed and advantage of the average RAM mixed with your HDD or SSD behavior (keeping data even if the module is powered off or not connected to a power source), This will make your average HDD or even SSD quite useless.

TOKYO–Toshiba Corporation (TOKYO: 6502) today announced the prototype of a new FeRAM —Ferroelectric Random Access Memory—that redefines industry benchmarks for density and operating speed. The new chip realizes storage of 128-megabits and read and write speeds of 1.6-gigabytes a second, the most advanced combination of performance and density yet achieved. Full details of the new FeRAM will be presented this week at the International Solid-State Circuits Conference 2009 (ISSCC2009) in San Francisco, USA.

The new FeRAM modifies Toshiba’s original chainFeRAMTM architecture, which significantly contributes to chip scaling, with a new architecture that prevents cell signal degradation, the usual tradeoff from chip scaling. The combination realizes an upscaled FeRAM with a density of 128-megabit. Furthermore, a new circuit that predicts and controls the fluctuations of power supply supports high-speed data transfers. This allowed integration of DDR2 interface to maximize data transfers at a high throughput at low power consumption, realizing read and write speeds of 1.6 gigabytes a second. In developing the new FeRAM, Toshiba broke its own record of 32-megabit density and 200-megabit data transfers, pushing performance to eight times faster than the transfer rate and density of the previous records and the fastest speed of any non-volatile RAM.

FeRAM combines the fast operating characteristics of DRAM with flash memory’s ability to retain data while powered off, attributes that continue to attract the attention of the semiconductor industry. Toshiba will continue R&D in FeRAM, aiming for further capacity increases and eventual use in a wide range of applications, including the main memory of mobile phones, mobile consumer products, and cache memory applications in products such as mobile PCs and SSDs.

Category Pc
              
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